Samsung Unveils Next-Generation AI Memory Technology and 3D-Memory Roadmap
Samsung Electronics has launched its next-generation AI memory technology, including the industry's first zHBM concept, aiming for an eight-fold performance increase over HBM5. The company also revealed a new 3D-memory roadmap as it seeks to lead in AI technology.
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Samsung Reveals New 3D-Memory Roadmap in Bid for AI Tech Lead
Samsung Electronics Co. offered a glimpse of its most advanced memory hardware, touting improved performance and power efficiency in a bid to overtake rivals SK Hynix Inc. and Micron Technology Inc. in the race for long-term dominance.
By Yoolim Lee
Read full article →Samsung stacks HBM atop AI chips in 3D memory push
Samsung Electronics is placing high-bandwidth memory directly on top of AI processors, unveiling a 3D architecture that requires less power to deliver faster data transfers. The tech giant is showcasing concept models of the architecture, called zHBM, and a NAND flash solution dubbed zNAND-O at Future of Memory and Storage 2026, held from Tuesday to Thursday at the Santa Clara Convention Center in California. Samsung described the two concept models as industry firsts. Conventional HBM packages
By The Korea Herald
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