Samsung Electronics' 12-Layer HBM4E push impacts AI memory position
Samsung Electronics' development of 12-Layer HBM4E technology is a significant move that will influence its standing in the competitive AI memory market.
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Samsung Electronics' development of 12-Layer HBM4E technology is a significant move that will influence its standing in the competitive AI memory market.

Samsung Electronics has begun shipping samples of its advanced HBM4E AI memory chips to global customers, positioning itself as a leader in the AI memory race. This development led to a significant surge in Samsung's shares, despite a minority union's challenge to a pay deal.
SK Hynix is maintaining its lead in the AI memory upgrade cycle by sampling 12-layer HBM4E, showcasing its technological advancements.
Samsung Electronics has begun shipping samples of its faster HBM4E chips to customers, leading to a jump in the company's shares.

SK Hynix has announced it has shipped samples of its 12-layer next-generation HBM4E chips to major customers, positioning the company alongside Samsung in the race for advanced AI memory technology. This move signifies a key development in the competitive landscape of high-bandwidth memory for artificial intelligence.

Samsung Electronics unveiled its seventh-generation HBM4E chip at Nvidia’s GPU Technology Conference, widely known as GTC, highlighting its push to strengthen its position in the AI memory market. Samsung on Monday announced its participation in GTC 2026 in San Jose, California, which runs Monday to Thursday, where it presented the HBM4E technology alongside a range of memory solutions designed to support Nvidia platforms. At the event, Samsung set up an exhibition area dubbed the “HBM4 Hero Wal